AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by plasma-enhanced ALD
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چکیده
منابع مشابه
AlGaN/GaN MIS-HEMT gate structure improvement using Al2O3 deposited by Plasma-Enhanced ALD
In this work we evaluate the influence of the Al2O3 ALD deposition technique on AlGaN/GaN MIS-HEMT structures. It has been found that using O2 plasma as oxidizer instead of water could increase the threshold voltage considerably while greatly reducing gate leakage current. C(V) measurements have shown a very fast on/off transition even at 1kHz, with low frequency dispersion, while a record slop...
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High-performance pentacene field-effect transistors have been fabricated using Al2O3 as a gate dielectric material grown by atomic layer deposition (ALD). Hole mobility values of 1.5 ± 0.2 cm/V s and 0.9 ± 0.1 cm/V s were obtained when using heavily n-doped silicon (n-Si) and ITO-coated glass as gate electrodes, respectively. These transistors were operated in enhancement mode with a zero turn-...
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In this study, the physical and electrical characteristics of Al2O3/La2O3/Al2O3/Si stack structures affected by the thickness of an Al2O3 barrier layer between Si substrate and La2O3 layer are investigated after a rapid thermal annealing (RTA) treatment. Time of flight secondary ion mass spectrometry (TOF-SIMS) and X-ray photoelectron spectroscopy (XPS) tests indicate that an Al2O3 barrier laye...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2013
ISSN: 0167-9317
DOI: 10.1016/j.mee.2013.04.020